Products
MBR20030CT
MBR20030CT
Product information
- Manufacturer:
- GeneSiC Semiconductor
- Part number:
- MBR20030CT
- Current - Average Rectified (Io) / diode:
- 200A (DC)
- Operating Temperature - Junction:
- -55°C ~ 150°C
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Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Category | Discrete Semiconductor Products Diodes Rectifiers Diode Arrays |
| Manufacturer | GeneSiC Semiconductor |
| Base Product Number | MBR20030 |
Electrical characteristics
| Parameter | Value |
|---|---|
| Current - Average Rectified (Io) / diode | 200A (DC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 650 MV @ 100 A |
| Diode Configuration | 1 Pair Common Cathode |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 5 MA @ 20 V |
Package & mechanical
| Parameter | Value |
|---|---|
| Supplier Device Package | Twin Tower |
| Package / Case | Bulk |
| Mounting Type | Chassis Mount |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
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