Products
TRS8A65F
TRS8A65F,S1Q
Product information
- Manufacturer:
- Toshiba Semiconductor And Storage
- Part number:
- TRS8A65F
- Current - Reverse Leakage @ Vr:
- 40 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 8 A
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Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Category | Discrete Semiconductor Products Diodes Rectifiers Single Diodes |
| Manufacturer | Toshiba Semiconductor And Storage |
| Base Product Number | TRS8A65 |
Electrical characteristics
| Parameter | Value |
|---|---|
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 8 A |
| Capacitance @ Vr, F | 28pF @ 650V, 1MHz |
| Reverse Recovery Time (trr) | 0 Ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 8A |
| Speed | No Recovery Time > 500mA (Io) |
Package & mechanical
| Parameter | Value |
|---|---|
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-2L |
| Package / Case | Tube |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
A localized overview is not yet available. The model-specific parameters are shown below.
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