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HN2D01FTE85LF

HN2D01FTE85LF

Product information

Manufacturer:
Toshiba Semiconductor And Storage
Part number:
HN2D01FTE85LF
Current - Average Rectified (Io) / diode:
80mA
Operating Temperature - Junction:
125°C (Max)

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Technical specifications

Same model · consistent parameters

Product identity

ParameterValue
CategoryDiscrete Semiconductor Products Diodes Rectifiers Diode Arrays
ManufacturerToshiba Semiconductor And Storage
Base Product NumberHN2D01

Electrical characteristics

ParameterValue
Current - Average Rectified (Io) / diode80mA
Operating Temperature - Junction125°C (Max)
Voltage - Forward (Vf) (Max) @ If1.2 V @ 100 MA
Diode Configuration3 Independent
Reverse Recovery Time (trr)4 Ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)80 V
SpeedSmall Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr500 NA @ 80 V

Package & mechanical

ParameterValue
Supplier Device PackageSC-74
Package / CaseTape & Reel (TR) Cut Tape (CT)
Mounting TypeSurface Mount

Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.

Product overview

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