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IRFB4110

IRFB4110 IC MOSFET IRF 100V 120A TO-220AB IRFB4110 IRFB4110PBF

Product information

Part number:
IRFB4110
Type:
IC CHIP, Triode Transistor, IGBT Transistor
Operating Temperature:
NA

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Technical specifications

Same model · consistent parameters

Product identity

ParameterValue
SeriesStandard
DescriptionIRF4905PBF

Electrical characteristics

ParameterValue
TypeIC CHIP, Triode Transistor, IGBT Transistor
Operating TemperatureNA
ApplicationMOSFET
Cross ReferenceNA
BrandNA
Current - Collector (Ic) (Max)NA
Voltage - Collector Emitter Breakdown (Max)NA
Vce Saturation (Max) @ Ib, IcNA
Current - Collector Cutoff (Max)NA
DC Current Gain (hFE) (Min) @ Ic, VceNA
Power - maxNA
Frequency - TransitionNA
Resistor - Base (R1)NA
Resistor - Emitter Base (R2)NA
FET TypeNA
Drain To Source Voltage (Vdss)NA
Current - Continuous Drain (Id) @ 25°CNA
Rds On (Max) @ Id, VgsNA
Vgs(th) (Max) @ IdNA
Gate Charge (Qg) (Max) @ VgsNA
Input Capacitance (Ciss) (Max) @ VdsNA
FrequencyNA
Current Rating (Amps)NA
Noise FigureNA
Power - outputNA
Voltage - RatedNA
Drive Voltage (Max Rds On, Min Rds On)NA
Vgs (Max)NA
IGBT TypeNA
Vce(on) (Max) @ Vge, IcNA
Input Capacitance (Cies) @ VceNA
InputNA
NTC ThermistorNA
Voltage - Breakdown (V(BR)GSS)NA
Current - Drain (Idss) @ Vds (Vgs=0)NA
Current Drain (Id) - MaxNA
Voltage - Cutoff (VGS Off) @ IdNA
Resistance - RDS(On)NA
VoltageNA
Voltage - outputNA
Voltage - Offset (Vt)NA
Current - Gate To Anode Leakage (Igao)NA
Current - Valley (Iv)NA
Current - PeakNA
ApplicationsNA
Transistor TypeMrf150 Rf Power Transistor

Package & mechanical

ParameterValue
Package / CaseThrought Hole

Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.

Source fields · English · 1

Some source fields await translation. They are separated below in English.

Package / CaseNA

Product overview

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