Products
IRF640PBF
New And Original N-Channel Transistor 200V 18A TO-220AB IRF640PBF IRF640
Product information
- Part number:
- IRF640PBF
- Type:
- IC CHIP, Field-Effect Transistor, IGBT Transistor
- Operating Temperature:
- -55°C ~ 150°C (TJ)
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Same model · consistent parameters
Electrical characteristics
| Parameter | Value |
|---|---|
| Type | IC CHIP, Field-Effect Transistor, IGBT Transistor |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Application | Irf Transistor |
| Cross Reference | NEW |
| Brand | MOSFET P-CH 200V 11A TO-220AB |
| FET Type | P-Channel |
| Drain To Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250uA |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Transistor Type | Mrf150 Rf Power Transistor |
Package & mechanical
| Parameter | Value |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | Throught Hole |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Source fields · English · 1
Some source fields await translation. They are separated below in English.
| Package / Case | TO-220-3 |
|---|
Product overview
A localized overview is not yet available. The model-specific parameters are shown below.
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