Products
IRF3710PBF
New And Original MOSFET N-Channel Transistor 100V 57A IRF3710PBF Irf3710
Product information
- Part number:
- IRF3710PBF
- Type:
- Ic Chip, Field-Effect Transistor, IGBT Transistor
- Operating Temperature:
- -55°C ~ 175°C (TJ)
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Same model · consistent parameters
Electrical characteristics
| Parameter | Value |
|---|---|
| Type | Ic Chip, Field-Effect Transistor, IGBT Transistor |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Application | Irf Transistor |
| Cross Reference | NEW |
| Brand | MOSFET N-CH 100V 57A TO-220AB |
| Current - Collector (Ic) (Max) | 1.5A |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 1.5A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 1A, 2V |
| Power - max | 40W |
| FET Type | N-Channel |
| Drain To Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 28A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3130pF @ 25V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Transistor Type | Mrf150 Rf Power Transistor |
Package & mechanical
| Parameter | Value |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | Throught Hole |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Source fields · English · 1
Some source fields await translation. They are separated below in English.
| Package / Case | TO-220-3 |
|---|
Product overview
A localized overview is not yet available. The model-specific parameters are shown below.
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