Products
IRFB4110PBF
High Quality IRFB4110 MOSFET N-CH 100V 120A TO-220AB IRFB4110PBF
Product information
- Part number:
- IRFB4110PBF
- Type:
- Pentode Transistor, Ic Chips
- Operating Temperature:
- -, -55°C ~ 150°C (TJ)
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Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Description | Transistors |
| Part Number | IRFB4110PBF |
Electrical characteristics
| Parameter | Value |
|---|---|
| Type | Pentode Transistor, Ic Chips |
| Operating Temperature | -, -55°C ~ 150°C (TJ) |
| Application | Electronic |
| FET Type | -, N-Channel |
| Drain To Source Voltage (Vdss) | -, 700V, 100V |
| Current - Continuous Drain (Id) @ 25°C | -, 8.5A (Tc), 120A (Tc) |
| Rds On (Max) @ Id, Vgs | -, 600mOhm @ 1.8A, 10V, 4.5 MOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | -, 4V @ 250uA |
| Gate Charge (Qg) (Max) @ Vgs | -, 10.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | -, 364pF @ 400V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Transistor Type | Mrf150 Rf Power Transistor |
| Technology | MOSFET (Metal Oxide) |
Package & mechanical
| Parameter | Value |
|---|---|
| Mounting Type | -, Surface Mount, Through Hole |
| Package / Case | Throught Hole |
| Supplier Device Package | TO-220AB |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Source fields · English · 1
Some source fields await translation. They are separated below in English.
| Package / Case | -, TO-252-3 |
|---|
Product overview
A localized overview is not yet available. The model-specific parameters are shown below.
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