SA2J-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 2 A
Products
VS-43CTQ100-1-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 175°C
US1004FL_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 1 A
VS-62CTQ030-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -65°C ~ 150°C
V1P22-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 15 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 880 MV @ 1 A
VS-47CTQ020-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
S1J_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
VBT30L60C-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- 150°C (Max)
BAS45A,143
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 1 NA @ 125 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA
VS-40CTQ150-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 175°C
V1F6HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 270 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 1 A
VB30202C-M3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -40°C ~ 175°C
VS-20CTH03SHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
SS16H
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 200 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 1 A
ES1B_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 1 A
MBR6045PT_T0_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- -65°C ~ 175°C
SD103AWS-G3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA
TSF20U100C
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C