PSDH30100S1_T0_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 250 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 3.15 V @ 30 A
Products
V40PW10C-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -40°C ~ 150°C
VS-E5PX6012LHN3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 3.3 V @ 60 A
V20PW60C-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 150°C
VS-E5PH6012LHN3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 2.5 V @ 60 A
RB098BM100FHTL
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- 150°C (Max)
SIC1060P-BP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 44 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.6 V @ 10 A
RBR10BM30ATL
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- 150°C
PCDD10120G1_L2_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 100 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 10 A
MBRF1060CT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-E5PW6006LHN3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 25 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.6 V @ 60 A
STPSC12065D
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 150 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.45 V @ 12 A
V20DM60C-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 175°C
VS-E5PX6006LHN3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 25 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.2 V @ 60 A
V20PWM45C-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 175°C
VS-3C08ET07T-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 45 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 8 A
V20PWM15C-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 175°C
PSDP30120L1_T0_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 250 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 2.6 V @ 30 A