BAS85-GS18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA
Products
BAS40CW_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 150°C
NSR02F30NXT5G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 50 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 200 MA
BAS40-05
- Manufacturer
- Yangzhou Yangjie Electronic Technology Co.,Ltd
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
SD103AW-G3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA
BAV23S
- Manufacturer
- Good-Ark Semiconductor
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- -55°C ~ 150°C
LS101A-GS08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 15 MA
MMBD6100W_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
S4M
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 4 A
BAW101E6433
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 250mA (DC)
- Operating Temperature - Junction
- 150°C
SS13LSHRVG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 400 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
BAV70W_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 150mA
- Operating Temperature - Junction
- -55°C ~ 150°C
V1F6-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 270 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 1 A
BAS40-07E6327
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 120mA (DC)
- Operating Temperature - Junction
- 150°C
SBR0230T5-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 2 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 610 MV @ 200 MA
BAS40-06
- Manufacturer
- Yangzhou Yangjie Electronic Technology Co.,Ltd
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
SS110HL-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 200 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 1 A
BAT64-04E6433
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 120mA
- Operating Temperature - Junction
- 150°C