FEPB16JT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 150°C
Products
RS1JL R3G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 800 MA
STTH16L06CT
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 175°C (Max)
ESH2PD-M3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 980 MV @ 2 A
MBR20H100CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
MURS120-E3/52T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 1 A
STPS10150CFP
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- 175°C (Max)
RF071M2STR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 700 MA
MBR3045PT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -65°C ~ 150°C
S15DLW RVG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1.5 A
VF20200C-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 150°C
RB168VWM-40TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 500 NA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 690 MV @ 1 A
MBR30H30CTG
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
ES1PDHM3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 1 A
RGL41M-E3/96
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
VB60100C-M3/8W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 150°C
VSS8D3M10-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 1.5 A
STTH2002CFP
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 175°C (Max)