MMBD3004SE RFG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- -65°C ~ 150°C
Products
SS24SHE3_B/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Operating Temperature - Junction
- -55°C ~ 150°C
APT100S20BG
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 MA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 100 A
BAS70TWQ-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 70mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
1SS55-T4-AZ
- Manufacturer
- Renesas Electronics America Inc
- Current - Reverse Leakage @ Vr
- 100 NA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 1 MA
1SS226,LF
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 125°C (Max)
IDH10G65C6XKSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 33 µA @ 420 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 10 A
1N4154
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 100 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 30 MA
BAS40-04Q-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
IDW75D65D1XKSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 40 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 75 A
MMBD1503A
- Manufacturer
- Rectron USA
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 150°C (Max)
B340AXF-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 3 A
BAV23A-QR
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- 150°C
APT75DQ120BG
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 100 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 3.1 V @ 75 A
M1MA151WKT1G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 100mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
SA2J-E3/5AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 2 A