FERD40M45CG-TR
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- 175°C (Max)
Products
IMBD4148-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2.5 µA @ 70 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 MA
SBAV99WT1
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 215mA
- Operating Temperature - Junction
- -65°C ~ 150°C
NTE637
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA
BAV99WT1H
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
BAS40TS_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 40 MA
SS3P4LHM3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 250 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 470 MV @ 3 A
STPR2040
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBRB20150CT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
TBAS16,LM
- Manufacturer
- Toshiba Semiconductor And Storage
- Technology
- Standard
- Voltage - DC Reverse (Vr) (Max)
- 80 V
NRVBS3200NT3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 1 MA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 840 MV @ 3 A
VS-MBRB4045CTL-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -65°C ~ 150°C
MMBD914-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 MA
BAT64-04WE6327
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 120mA
- Operating Temperature - Junction
- 150°C