BAS40WT-05-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 150°C
Products
1SS372(TE85L,F)
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 20 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 100 MA
BAW56-G3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 250mA
- Operating Temperature - Junction
- 150°C (Max)
NTE506
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 5 MA @ 1500 V
- Voltage - Forward (Vf) (Max) @ If
- 2.5 V @ 500 MA
BAV199Q-13-F-52
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 160mA
- Operating Temperature - Junction
- -65°C ~ 150°C
B320AF-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 200 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 3 A
MMBD7000-G3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
PMEG2005ELD,315
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 30 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 500 MA
MMBD4148SE RFG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 150°C
1N645
- Manufacturer
- Solid State Inc.
- Current - Reverse Leakage @ Vr
- 200 NA @ 225 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 400 MA
MMBD4448V-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 250mA
- Operating Temperature - Junction
- 150°C (Max)
NTE578
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 500 µA @ 90 V
- Voltage - Forward (Vf) (Max) @ If
- 790 MV @ 1 A
RB731UTW_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 30mA
- Operating Temperature - Junction
- -55°C ~ 125°C
BAT42W RHG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 500 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 200 MA
BAV99-G3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 150mA
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
NTE570
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 µA @ 130 V
- Operating Temperature - Junction
- -40°C ~ 150°C
BAS70WT-06-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 70mA
- Operating Temperature - Junction
- -55°C ~ 125°C
V1PM15-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.21 V @ 1 A