VFT1060C-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
Products
VS-15ETH03-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 40 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 15 A
RBQ10BM45ATL
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 150°C (Max)
FR157G
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 5 µA @ 700 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1.5 A
MBRF8150CT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 150°C
FR153G
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 5 µA @ 140 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1.5 A
MBRF10100CTH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-10WQ045FN-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 MA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 20 A
MBR20150SCT-G1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
RS1MFSH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
MBR10H200CT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
VS-HFA08TB60S-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.1 V @ 16 A
BYQ28E-100-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
V10P20-M3/86A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 400 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.34 V @ 10 A
UGF1006GH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
RS1DFSH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
SRF10100H
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-6TQ045-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 800 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 730 MV @ 12 A