V60120C-M3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 150°C
Products
CSD01060A
- Manufacturer
- Wolfspeed, Inc.
- Current - Reverse Leakage @ Vr
- 100 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 1 A
MBR3045CT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-6CWH02FNTRRHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- 175°C (Max)
WNSC2D10650DJ
- Manufacturer
- WeEn Semiconductors
- Current - Reverse Leakage @ Vr
- 50 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 10 A
RMPG06B-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
VS-16CTQ060STRLHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 175°C
PMEG2010AEB-QF
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 1.5 MA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 620 MV @ 1 A
GIB2404-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- -65°C ~ 150°C
MBRB1060-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 10 A
SDT40A60VCTFP
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
VB30150C-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
SSA24-M3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 490 MV @ 2 A
VS-32CTQ030-1-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-MURB1520-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 15 A
FEPB16DT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 150°C
SB150-T
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 500 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 1 A
VS-5EWH06FN-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.85 V @ 5 A