BAS70-02W E6327
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 100 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 15 MA
Products
VS-MURD620CTTRLHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -65°C ~ 175°C
RS1JF-T
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
MBRB25H45CTHE3_B/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
BAT54B5000
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA
SBLB25L30CTHE3_B/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 12.5A
- Operating Temperature - Junction
- -55°C ~ 150°C
HS1DF-T
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
MBR3060CTH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
E4D20120D
- Manufacturer
- Wolfspeed, Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 10 A
VS-6CWH02FNTRHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- 175°C (Max)
SE10PBHM3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 1 A
MBRB2090CT-M3/8W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
C4D15120H
- Manufacturer
- Wolfspeed, Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 15 A
VB20202G-M3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 175°C
FFSPF2065A
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 200 µA @ 650 V
- Operating Temperature - Junction
- -55°C ~ 175°C
MBRF2545CTH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 25A
- Operating Temperature - Junction
- -55°C ~ 150°C
SF14G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 1 A
MBRB25H35CTHE3_B/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C