CMS20I40A(TE12L,QM
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 520 MV @ 2 A
Products
DAA10P1800PZ-TRL
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
HER301G-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 10 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 3 A
VS-30CPQ080-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- 175°C (Max)
SDT10A100P5-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 100 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 680 MV @ 10 A
DSP8-12AS-TRL
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 11A
- Operating Temperature - Junction
- -55°C ~ 175°C
ES2DVH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 2 A
TSF40L200C
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
MUR160H
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A
VX80100PWHM3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -40°C ~ 150°C
V8PM153-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 870 MV @ 8 A
MBR30200PTH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
SS26-M3/52T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 400 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 2 A
WNSC2D16650CWQ
- Manufacturer
- WeEn Semiconductors
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- 175°C
V8PM63-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 640 MV @ 8 A
DSEC16-12AS-TRL
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
CMS20I30A(TE12L,QM
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 100 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 2 A
MBR40200PTH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -55°C ~ 150°C