BAY72TR
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 100 NA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA
Products
MSRT200160AD
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
SR5010HL-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 20 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 780 MV @ 5 A
FST100150
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 50A
- Operating Temperature - Junction
- -55°C ~ 155°C
FDH400TR
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 100 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 300 MA
300CNQ045
- Manufacturer
- SMC Diode Solutions
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
RB511VM-40TE-17
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 25 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 410 MV @ 10 MA
VS-VSKC196/12PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 97.5A
- Operating Temperature - Junction
- -55°C ~ 175°C
S5DHE3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 5 A
FST10040
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
MUR310S
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Operating Temperature - Junction
- -55°C ~ 175°C
286-822
- Manufacturer
- WAGO Corporation
- Current - Average Rectified (Io) / diode
- 5.1mA
- Operating Temperature - Junction
- -25°C ~ 40°C
PMEG4002ESFYL
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 6.5 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA
300CMQ035
- Manufacturer
- SMC Diode Solutions
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
ES2DA R3G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 2 A
ESH3B
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Operating Temperature - Junction
- -55°C ~ 175°C
FST10060
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS40L-G3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 40 MA