MUR4L40
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.28 V @ 4 A
Products
VS-VSKC320-04PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -40°C ~ 150°C
SB5100
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 500 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 5 A
APTDF400AA170G
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 480A
- Voltage - Forward (Vf) (Max) @ If
- 2.5 V @ 400 A
VS-30WQ03FNTRL-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 MA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 3 A
MURTA20060R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-VSKJ320-04PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 160A
- Operating Temperature - Junction
- -40°C ~ 150°C
ES2B-E3/5BT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 2 A
MSCDC600A120AG
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 600A
- Operating Temperature - Junction
- -40°C ~ 175°C
V8PM10HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 60 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 8 A
VS-VSKD270-16PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 135A
- Operating Temperature - Junction
- -40°C ~ 150°C
MPG06J-E3/73
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MURTA20020R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
B5819WSHE3-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 40 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 1 A
MDD312-22N1
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 310A
- Operating Temperature - Junction
- -40°C ~ 150°C
SB260-E3/53
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 680 MV @ 2 A
MSCDC200A170D1PAG
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -40°C ~ 175°C
US1MHE3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1 A