G3S12010B
- Manufacturer
- Global Power Technology-GPT
- Current - Average Rectified (Io) / diode
- 39A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
Products
PMEG3020EP-QX
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 3 MA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 360 MV @ 2 A
G4S06530BT
- Manufacturer
- Global Power Technology-GPT
- Current - Average Rectified (Io) / diode
- 39A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
KD160KB160
- Manufacturer
- SanRex Corporation
- Current - Average Rectified (Io) / diode
- 160A
- Operating Temperature - Junction
- -40°C ~ 150°C
VS-HFA04TB60SL-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.2 V @ 8 A
G3S12006B
- Manufacturer
- Global Power Technology-GPT
- Current - Average Rectified (Io) / diode
- 14A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
S3BB
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 3 A
SCS230KE2C
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 15A (DC)
- Operating Temperature - Junction
- 175°C (Max)
V8P12-M3/87A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 300 µA @ 120 V
- Voltage - Forward (Vf) (Max) @ If
- 840 MV @ 8 A
BAS40HYT116
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 40 MA
G3S06516B
- Manufacturer
- Global Power Technology-GPT
- Current - Average Rectified (Io) / diode
- 25.5A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
AS1PKHM3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A
G5S12040BM
- Manufacturer
- Global Power Technology-GPT
- Current - Average Rectified (Io) / diode
- 62A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
S3KB
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 10 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 3 A
FDS100CA120
- Manufacturer
- SanRex Corporation
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -40°C ~ 150°C
G3S12004B
- Manufacturer
- Global Power Technology-GPT
- Current - Average Rectified (Io) / diode
- 8.5A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
AS1PGHM3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A
G4S06516BT
- Manufacturer
- Global Power Technology-GPT
- Current - Average Rectified (Io) / diode
- 25.9A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C