MURB2020CT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
Products
1N5821US/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 100 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 3 A
HFA16PA120C
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
RGP30J-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 3 A
25CTQ040
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
JAN1N5711UR-1
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 200 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 15 MA
MBRB2090CT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
FMB-G24H
- Manufacturer
- Sanken Electric USA Inc.
- Current - Reverse Leakage @ Vr
- 10 MA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 10 A
48CTQ060-1
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
JAN1N5622US
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 500 NA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 3 A
HFA280NJ60C
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 222A (DC)
- Voltage - Forward (Vf) (Max) @ If
- 1.6 V @ 140 A
CMR3U-01 TR13 PBFREE
- Manufacturer
- Central Semiconductor Corp
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 3 A
322CNQ030
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 175°C
JANTX1N5620US
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 500 NA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 3 A
30CTQ035S
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 175°C
PMEG100T200ELPEZ
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 840 MV @ 20 A
15CTQ045
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- -55°C ~ 150°C
JAN1N5616US
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 500 NA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 3 A