B260S1F-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 200 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 2 A
Products
MMBD6100LT1
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-60APU06-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.68 V @ 60 A
BAW56T-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 75mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
PMEG2010AEH,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 430 MV @ 1 A
MMBD2838LT1
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- -55°C ~ 150°C
STTH1502DI
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 15 A
CCS15S40,L3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 1.5 A
87CNQ020A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -55°C ~ 150°C
SBLF10L25-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 800 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 460 MV @ 10 A
MMBD2837LT1
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- -55°C ~ 150°C
RS1B-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
BAV23C-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 400mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
VS-ETH3106FP-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.15 V @ 30 A
MMBD4448HTM-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 250mA
- Operating Temperature - Junction
- -65°C ~ 150°C
S1G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MMBD3004BRM-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 225mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C