RB160M-30TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 50 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 480 MV @ 1 A
Products
RB215T-40
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 150°C (Max)
BAS16WT1G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
MBR2045CTG
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
BAT54W-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA
VS-MBR3035WTPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
SS16LSHRVG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 400 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 1 A
SBG1630CT-T-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- -65°C ~ 125°C
RB520S30T5G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 1 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA
NSDEMN11XV6T5G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 100mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
MMBD914-7-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
VS-32CTQ030STRRPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
MUR130RLG
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A
VS-16CTQ100PBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -55°C ~ 175°C
BAS32L,135
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA
V3PM12-M3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 300 µA @ 120 V
- Voltage - Forward (Vf) (Max) @ If
- 620 MV @ 1.5 A
VS-80CNQ045APBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N4531,133
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 25 NA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 MA