MBRB20H45CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
Products
ES1G-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A
MSAD120-16
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 120A
- Voltage - Forward (Vf) (Max) @ If
- 1.43 V @ 300 A
C3D08060A
- Manufacturer
- Wolfspeed, Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 8 A
FEPB6CT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -55°C ~ 150°C
BYS12-90-E3/TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 90 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 1 A
MBRB3035CT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
BAT6402VH6327XTSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 2 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 100 MA
MBRB2060CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
STTH30R06PI
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 25 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.85 V @ 30 A
MBRB25H45CT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
C3D06060A
- Manufacturer
- Wolfspeed, Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 6 A
APT2X151DL60J
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 175°C
PMEG4010ETR,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 490 MV @ 1 A
FEPB6AT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBRB2035CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
MER2DAL-AU_R1_007A1
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 2 A
MBRB2550CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C