MMBD1401
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 100 NA @ 175 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 200 MA
Products
UGB10FCTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
DFLU1200-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 980 MV @ 1 A
SBLB2040CT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBRB20H60CT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
ES1BHE3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 1 A
UH4PBCHM3/87A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 2A
- Operating Temperature - Junction
- -55°C ~ 175°C
RB531VM-30TE-17
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 45 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 490 MV @ 100 MA
PMEG3005EB,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 500 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 500 MA
SBLB1640CT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -40°C ~ 125°C
SBR160S23-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 100 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 530 MV @ 750 MA
UGB10CCTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
MBR0530T3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 130 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 430 MV @ 500 MA
MBRB20H100CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
SBR1U200P1-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 50 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 820 MV @ 1 A
UGB8HCTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 4A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBRB30H50CT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
SL03-GS08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 130 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 430 MV @ 1.1 A