FEP6ATHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -55°C ~ 150°C
Products
US1B-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
MBRS230LT3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 1 MA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 2 A
UH4PCCHM3/87A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 2A
- Operating Temperature - Junction
- -55°C ~ 175°C
GI2403HE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- -65°C ~ 150°C
SS15
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 200 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 1 A
BYQ28EB-200HE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
RB050LAM-60TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 560 MV @ 3 A
FEP16GTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- -55°C ~ 150°C
CD1408-FU1400
- Manufacturer
- Bourns Inc.
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 1 A
BYQ28E-150HE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
S215FA
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 100 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 2 A
UGB8JCTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 4A
- Operating Temperature - Junction
- -55°C ~ 150°C
CRH01(TE85L,Q,M)
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 980 MV @ 1 A
FEPF6BT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -55°C ~ 150°C
RB050LAM-40TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 3 A
FEP16BTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- -55°C ~ 150°C
MURS120T3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 2 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 1 A