VSSAF3N50-M3/6A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 MA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 400 MV @ 1.5 A
Products
MBR1550CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 7.5A
- Operating Temperature - Junction
- -65°C ~ 175°C
SS34-E3/9AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 3 A
B360B-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 500 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 3 A
MBR20H60CTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
NRVTS8120EMFST1G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 50 µA @ 120 V
- Voltage - Forward (Vf) (Max) @ If
- 880 MV @ 8 A
FEP16CTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 16A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBR25H60CTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
S8MC-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 10 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 985 MV @ 8 A
M30L40C-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
STTH1R06AF
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.9 V @ 1 A
MBR2060CTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
SBR3U40P1-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 400 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 470 MV @ 3 A
VS-4ESH02HM3/86A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 930 MV @ 4 A
BYV32-200HE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 18A
- Operating Temperature - Junction
- -65°C ~ 150°C
MBR25H50CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
RB168VYM150FHTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 1 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 890 MV @ 1 A
MBR2045CTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C