U30DCT-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
Products
SCS306AMC
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 30 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 6 A
UG18ACT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 18A
- Operating Temperature - Junction
- -65°C ~ 150°C
1N5060TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 2.5 A
UES1303
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 925 MV @ 6 A
SBLF25L25CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 12.5A
- Operating Temperature - Junction
- -55°C ~ 150°C
SB20H150CT-1E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
VS-E5TH3012-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 2.5 V @ 30 A
U20CCT-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
STTH1R06U
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 1 A
SBLF2040CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
C4D20120H
- Manufacturer
- Wolfspeed, Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 20 A
MI2050C-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
VS-8EWF12STR-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 8 A
UG10FCT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
S5JC-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 5 A
UB20BCT-E3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-85HFR160
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 4.5 MA @ 1600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 267 A