MBR50040CT
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
Products
BAS116UDJ-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-ETL1506S-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 15 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.07 V @ 15 A
VS-MBRD660CTTRLPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 3A
- Operating Temperature - Junction
- -40°C ~ 150°C
MBR50035CT
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
PMEG3005EL,315
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 500 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 500 MA
STPS1545FP
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 200 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 840 MV @ 30 A
MBR50030CT
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
1SS54-TB
- Manufacturer
- Renesas Electronics America Inc
- Current - Reverse Leakage @ Vr
- 100 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 1 MA
VS-20CTQ035STRLPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 175°C
BYT79-500,127
- Manufacturer
- WeEn Semiconductors
- Current - Reverse Leakage @ Vr
- 50 µA @ 500 V
- Voltage - Forward (Vf) (Max) @ If
- 1.38 V @ 30 A
MBR50020CTR
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
CDBV3-54S-G
- Manufacturer
- Comchip Technology
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
BAS16E6327HTSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
MBR500100CTR
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N4150
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 100 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 200 MA
RB481YT2R
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 125°C (Max)