MBRF10200CT-JT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 175°C
Products
S1J-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
FST153100A
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 75A
- Voltage - Forward (Vf) (Max) @ If
- 940 MV @ 75 A
NRVBS240LNT3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 2 MA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 430 MV @ 2 A
VS-MBR2545CT-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
SB240
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 500 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 2 A
MBR3045CT-G1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
BY206GP-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 2 A
RB068VWM-30TFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 600 NA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 2 A
MBR2060CT-I
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
SB260
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 500 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 2 A
FMW-24H
- Manufacturer
- Sanken Electric USA Inc.
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -40°C ~ 150°C
RRE02VTM4SFHTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 200 MA
MBR20200CT-LJ
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
HN2D01FU(TE85L,F)
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Average Rectified (Io) / diode
- 80mA
- Operating Temperature - Junction
- 125°C (Max)
S8MS-E3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 985 MV @ 8 A
1N5818RL
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 500 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
VS-HFA30TA60C-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C