ES1GL RVG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
Products
VS-MBR2535CT-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
SS2003M-TL-E
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 1.25 MA @ 15 V
- Voltage - Forward (Vf) (Max) @ If
- 400 MV @ 2 A
1N6660
- Manufacturer
- Microsemi Corporation
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
SMMSD914T1G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 MA
MBRB25H50CTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
SE15PJ-M3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 1.5 A
VS-MBR3045CT-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
PUAD4BH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 2 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 4 A
VIT1060CHM3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS86-GS08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 100 MA
VS-HFA16TA60C-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 8A
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 8 A
CUHS15F40,H3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 50 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 630 MV @ 1.5 A
STPSC16H065CT
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 8A
- Operating Temperature - Junction
- -40°C ~ 175°C
MBRAD8150H
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 8 A
VS-MBR2035CT-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
VS-2EQH02HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 2 A
VI40100CHM3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -40°C ~ 150°C