VS-4EWH02FNTR-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 4 A
Products
VS-STPS40L15CT-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 125°C
DSC08C065FP
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 200 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 8 A
MBRT30020L
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBR2045CT-LJ-01
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
PNE20020ERX
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 200 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 980 MV @ 2 A
RS3J-E3/57T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 2.5 A
DCB010-TB-E
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 125°C (Max)
MBR60045CTL
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
NTE551
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 µA @ 1500 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 2 A
VS-MBRB3030CTLPBF
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
SS1FH10HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 1 A
GSXF120A040S1-D3
- Manufacturer
- SemiQ
- Current - Average Rectified (Io) / diode
- 120A
- Operating Temperature - Junction
- -55°C ~ 175°C
V10P6-M3/86A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1.9 MA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 590 MV @ 10 A
NTSV30H100ECTG
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -40°C ~ 175°C
NTE581
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 8 A
MBR40040CTL
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N5401G-T
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A