1N5806USE3
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 1 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 2.5 A
Products
10TQ045
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 2 MA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 570 MV @ 10 A
JANTXV1N4148UBCA
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -65°C ~ 200°C
MBR2060CTF-G1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
PMEG120G20ELRX
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 30 NA @ 120 V
- Voltage - Forward (Vf) (Max) @ If
- 840 MV @ 2 A
BYV28-600-TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 5 A
MBRT40045RL
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBRT60035RL
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
NTE5967
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 1 MA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 57 A
CMPSH-3C TR
- Manufacturer
- Central Semiconductor Corp
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- -65°C ~ 150°C
SDM100K30L-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 100 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 485 MV @ 1 A
MBRT40035RL
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBRB1060-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 10 A
MBRT60020RL
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
NTE5841
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 µA @ 500 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 3 A
MBR2060CT-E1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
GL41A-E3/97
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MBRT40020RL
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C