PMEG60T20ELPX
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 1.2 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 620 MV @ 2 A
Products
MBR20150SCT-E1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 150°C (Max)
NTE5882
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 12 MA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.26 V @ 38 A
STPSC10H12G-TR
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 60 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 10 A
MBRF400150
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
NTE5918
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 12 MA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.23 V @ 63 A
MBRTA40030RL
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
AU1PM-M3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.85 V @ 1 A
MBRF20060
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
SBRT30A100CT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
STTH61W04SW
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 20 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 60 A
MBRF30045
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
SMMSD301T1G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 200 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 10 MA
MBRF60080R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-85EPF12
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 85 A
MBRF20040
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
IDH06G65C5XKSA2
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 110 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 6 A
RB088T150FH
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- 150°C (Max)