MBRF10100CTHC0G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
Products
BAV20W-G RHG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 100 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
MBR6050PTHC0G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS40WS_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 10 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 40 MA
SK54BL_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 460 MV @ 5 A
GP1005
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS70 RFG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 100 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 15 MA
MBRS2590CT MNG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 25A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBR6090PTHC0G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAV20,113
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 100 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
GP1002HC0G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
V8P10HM3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 70 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 680 MV @ 8 A
RB520S30_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 200 MA
MBR6050PT C0G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAT46GW
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 250 MA
MBR30150PTHC0G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBRS2550CT MNG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 25A
- Operating Temperature - Junction
- -55°C ~ 150°C
SS10PH10-M3/87A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 880 MV @ 10 A