UGB15HTHE3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 30 µA @ 500 V
- Operating Temperature - Junction
- -55°C ~ 150°C
Products
VS-60APH03-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.45 V @ 60 A
UGB12HT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 30 µA @ 500 V
- Operating Temperature - Junction
- -55°C ~ 150°C
V2N103-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 150 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 670 MV @ 2 A
DD380N16KHPSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 380A
- Operating Temperature - Junction
- -40°C ~ 150°C
VS-90APS12L-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 90 A
FESE16BT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Operating Temperature - Junction
- -65°C ~ 150°C
PMEG2010ER-QX
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 1 MA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 340 MV @ 1 A
UGB12JT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 30 µA @ 600 V
- Operating Temperature - Junction
- -55°C ~ 150°C
PG200_R2_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 2 A
UGF2005GH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 175°C
ER104_R2_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A
FESE16CT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 150 V
- Operating Temperature - Junction
- -65°C ~ 150°C
SS2030FL-AU_R1_000A1
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 100 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 2 A
FEPB6BT-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 6A
- Operating Temperature - Junction
- -55°C ~ 150°C
APT60D40BG
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 250 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 60 A
UGF10L08G C0G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
V2NL63-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 2 A