TSV6393AIST
- Manufacturer
- STMicroelectronics
- Current - Supply
- 60 UA
- Current - Input Bias
- 10 PA
Products
UES1304HR2
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 20 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 3 A
JANTXV1N6630US
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 1.4 A
JANS1N5807
- Manufacturer
- Microchip Technology
- Operating Temperature - Junction
- -65°C ~ 175°C
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 4 A
VS-T40HF120
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 15 MA @ 1200 V
- Technology
- Standard
JANS1N6638U/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 500 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 200 MA
UES1304E3
- Manufacturer
- Microchip Technology
- Operating Temperature - Junction
- -55°C ~ 150°C
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 3 A
JANTXV1N5811URS/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 4 A
UES1304E3/TR
- Manufacturer
- Microchip Technology
- Operating Temperature - Junction
- -55°C ~ 150°C
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 3 A
JANTXV1N5807URS/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 4 A
JANTXV1N6628U/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 µA @ 660 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 2 A
JANTXV1N5809URS/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 4 A
VS-T40HFL60S02
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 600 V
- Reverse Recovery Time (trr)
- 200 Ns
1N4150UBD
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -65°C ~ 175°C
1N4150UBD/TR
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -65°C ~ 175°C
UES1306E3/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 20 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 3 A
UES1306/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 20 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 3 A