SMLWHManufacturerTaiwan Semiconductor CorporationCurrent - Reverse Leakage @ Vr1 µA @ 1000 VVoltage - Forward (Vf) (Max) @ If1.1 V @ 800 MA Request a quote
AI-generated category illustration; not a product photograph.BAS40TW-7-F-2477ManufacturerDiodes IncorporatedCurrent - Average Rectified (Io) / diode200mAOperating Temperature - Junction-55°C ~ 125°C Request a quote
AI-generated category illustration; not a product photograph.SA2G-E3/61TManufacturerVishay General Semiconductor - Diodes DivisionCurrent - Reverse Leakage @ Vr3 µA @ 400 VVoltage - Forward (Vf) (Max) @ If1.1 V @ 2 A Request a quote
AI-generated category illustration; not a product photograph.NRVBD660CTRLGManufacturerOnsemiCurrent - Average Rectified (Io) / diode3AOperating Temperature - Junction-65°C ~ 175°C Request a quote
SE30NG-M3/IManufacturerVishay General Semiconductor - Diodes DivisionCurrent - Reverse Leakage @ Vr10 µA @ 400 VVoltage - Forward (Vf) (Max) @ If1.1 V @ 3 A Request a quote
AI-generated category illustration; not a product photograph.BAS40W-05-7-F-2477ManufacturerDiodes IncorporatedCurrent - Average Rectified (Io) / diode200mAOperating Temperature - Junction-55°C ~ 125°C Request a quote
AI-generated category illustration; not a product photograph.ES1BWG_R1_00001ManufacturerPanjit International Inc.Current - Reverse Leakage @ Vr1 µA @ 100 VVoltage - Forward (Vf) (Max) @ If950 MV @ 1 A Request a quote
AI-generated category illustration; not a product photograph.BAS40DW-6-7-FManufacturerDiodes IncorporatedCurrent - Average Rectified (Io) / diode200mAOperating Temperature - Junction-55°C ~ 125°C Request a quote
RS1GL RVGManufacturerTaiwan Semiconductor CorporationCurrent - Reverse Leakage @ Vr5 µA @ 400 VVoltage - Forward (Vf) (Max) @ If1.3 V @ 800 MA Request a quote
SBR30A40CTFP-GManufacturerDiodes IncorporatedCurrent - Average Rectified (Io) / diode30AOperating Temperature - Junction-65°C ~ 150°C Request a quote
AI-generated category illustration; not a product photograph.SD103BW-HE3-08ManufacturerVishay General Semiconductor - Diodes DivisionCurrent - Reverse Leakage @ Vr5 µA @ 20 VVoltage - Forward (Vf) (Max) @ If600 MV @ 200 MA Request a quote
AI-generated category illustration; not a product photograph.BAS40-04-7-F-79ManufacturerDiodes IncorporatedCurrent - Average Rectified (Io) / diode200mA (DC)Operating Temperature - Junction-55°C ~ 125°C Request a quote
PU2BFSHManufacturerTaiwan Semiconductor CorporationCurrent - Reverse Leakage @ Vr2 µA @ 100 VVoltage - Forward (Vf) (Max) @ If930 MV @ 2 A Request a quote
AI-generated category illustration; not a product photograph.BAS40DW-05-7-F-2477ManufacturerDiodes IncorporatedCurrent - Average Rectified (Io) / diode200mAOperating Temperature - Junction-55°C ~ 125°C Request a quote
AI-generated category illustration; not a product photograph.SD103AW-HE3-18ManufacturerVishay General Semiconductor - Diodes DivisionCurrent - Reverse Leakage @ Vr5 µA @ 30 VVoltage - Forward (Vf) (Max) @ If600 MV @ 200 MA Request a quote
AI-generated category illustration; not a product photograph.DA227YFHT2RManufacturerRohm SemiconductorCurrent - Average Rectified (Io) / diode100mAOperating Temperature - Junction150°C (Max) Request a quote
AI-generated category illustration; not a product photograph.BAS16T-7-FManufacturerDiodes IncorporatedCurrent - Reverse Leakage @ Vr2 µA @ 75 VVoltage - Forward (Vf) (Max) @ If1 V @ 50 MA Request a quote
SBR30M40CTFP-JTManufacturerDiodes IncorporatedCurrent - Average Rectified (Io) / diode15AOperating Temperature - Junction-65°C ~ 175°C Request a quote