BAT54TW-7-F-2477
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -65°C ~ 150°C
Products
ER1A-LTP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 1 A
BAT54S-7-F-2477
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -65°C ~ 150°C
UF4003-E3/73
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
BAS40W-5-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 125°C
V1FL45-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 250 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 530 MV @ 1 A
BAV70W
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 300mA
- Operating Temperature - Junction
- -65°C ~ 150°C
RS2A-E3/5BT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1.5 A
MBR60L45WTG
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -65°C ~ 175°C
SBR3U60P1-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 3 A
UGB10GCTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
CD214A-B120LR
- Manufacturer
- Bourns Inc.
- Current - Reverse Leakage @ Vr
- 1 MA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 380 MV @ 1 A
BAV99W,135
- Manufacturer
- NXP USA Inc.
- Current - Average Rectified (Io) / diode
- 150mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
S1PG-M3/85A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
UGB10FCTHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -40°C ~ 150°C
RR1VWM6STFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 1 A
BAV199/ZLR
- Manufacturer
- NXP USA Inc.
- Current - Average Rectified (Io) / diode
- 160mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
VS-2EAH02HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 2 A