VS-T85HF10
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 MA @ 100 V
- Technology
- Standard
Products
JANS1N6643U
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 500 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
R20480
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 30 A
1N3649
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 2.2 V @ 10 A
1N5331
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 1400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 30 A
JANS1N6643US
- Manufacturer
- Microchip Technology
- Operating Temperature - Junction
- -65°C ~ 175°C
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
VS-T110HF20
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 MA @ 200 V
- Technology
- Standard
UES1305/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 20 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 3 A
1N3649R
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 2.2 V @ 10 A
1N5711UBCA
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 33mA
- Operating Temperature - Junction
- -65°C ~ 150°C
1N6700US
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 200 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 470 MV @ 5 A
JANTXV1N6642UBD/TR
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 300mA
- Operating Temperature - Junction
- -65°C ~ 175°C
JANS1N5614
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 500 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 3 A
VS-T85HF60
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 MA @ 600 V
- Technology
- Standard
1N3650R
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 2.2 V @ 10 A
1N6701US
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 200 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 470 MV @ 5 A
JANTXV1N6642UBCA/TR
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 300mA
- Operating Temperature - Junction
- -65°C ~ 175°C