GP10KE-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 1 A
Products
B340AF-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 3 A
MAX9061EUK+T
- Manufacturer
- Maxim Integrated
- Current - Supply
- 700 NA
- Current - Input Bias
- 40 NA
E4D02120E-TR
- Manufacturer
- Wolfspeed, Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 2 A
GP10BE-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
S3JBHR5G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 3 A
STTH3002G-TR
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 20 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 30 A
GP10-4002E-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Technology
- Standard
- Voltage - DC Reverse (Vr) (Max)
- 100 V
NXPSC06650B6J
- Manufacturer
- WeEn Semiconductors
- Current - Reverse Leakage @ Vr
- 200 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 6 A
ES2A-LTP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 2 A
VS-E5TH3006S2L-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.6 V @ 30 A
ER1QG-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 5 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.85 V @ 1 A
B140HB-13-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 530 MV @ 1 A
UPS835LE3/TR13
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 1.4 MA @ 35 V
- Voltage - Forward (Vf) (Max) @ If
- 510 MV @ 8 A
BAS16HYT116
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 500 NA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
RSFJL RUG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 500 MA
V35PW22-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 350 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 990 MV @ 35 A
RB162M-60TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 1 A